ICP-CVD
*CVD Chamber + Sputter Chamber + Loadlock Chamber
*High Density Plasma Source (ICP Type) & Single CVD Chamber
*Internal 4” Size Sputtering Cathode & Sputter Chamber
*High Vacuum Pumping Speed & Characterized Pumping Channel...

CIGS Evaporator
*Deposition thickness: up to several ten thousands Å for CIGS film
*Film thickness uniformity: ≤ ± 5 % on 100 x 100 mm2 substrate
*In-situ temperature monitoring software of depositing CIGS film

TCO Cluster Type for SolarCell
*Loading Chamber(LC) + Process Chamber (PM1, PM2) + Transfer Chamber (TM)
*Magnetron Sputtering System / E-Beam & Thermal Evaporating System
*Film Uniformity <+/- 5% (at 100X100 Glass, sample except the 5mm edge)

Cluster type MOCVD System for SolarCell
*CVD Processing -Vacuum Processing Chamber
*Max. 4” Wafer Process
*Substrate Temperature : Max. 1100℃
*Gas Supply Unit using MFC, Pneumatic Valve & Plasma Unit
*Bubbler Bath with Controller