SELECT : 한국어 | ENGLISH | 中國語 6Gen. In-Line Sputtering System   5Gen. In-Line Sputtering System   CIGS Cluster System   a-Si Cluster System       The Large Scale TCO Sputtering Equipm ent for the manufacture of solarcell electro de production, apply to the formation of m etal layer Substrate Type : Glass & Wafer Substrate Size : 2Gen ~ 6 Gen Metal Coating : Mo, Al, CIGS,Ag,Cr & etc Oxide Coating : AZO,GZO,ITO,ZnO & etc Glass Heating : Max 300℃   The Large Scale TCO Sputtering Equipm ent for the manufacture of solarcell electro de production, apply to the formation of m etal layer Substrate Type : Glass & Wafer Substrate Size : 2Gen ~ 6 Gen Metal Coating : Mo, Al, CIGS,Ag,Cr & etc Oxide Coating : AZO,GZO,ITO,ZnO & etc Glass Heating : Max 300℃   The Cluster type equipment for the manuf acture of CIGS Solarcell. Mo layer-CIGS la yer-IZnO-TCO layer etc. Sequentially form ation. Substrate Type : Glass & Wafer Substrate Size : ~ 200mm x 200mm Metal Sputter : Mo,ZnO,TCO CIGS Evaporator : Cu,In,Ga,Se Evaporatio n Using Effusion Source Glass Heating : Max 300℃   The Cluster type equipment for the manuf acture of a-Si Solar Cell. Back Contact la yer-Absorb layer-Front contact layer etc. S equentially formation Substrate Type : Glass & Wafer Substrate Size : 100mm x 100mm ~ Metal Sputter : AZO,Ag & etc PECVD : PIN Layer Glass Heating : Max 400℃       3.5G In-Line Sputtering System                         The Large Scale Inline Sputter for Oxide and Metal Layer Deposition in Touch Screen Panel Substrate Type : Glass Substrate Size : 2Gen ~ 6 Gen Metal Coating : Mo, Al, Ag, Cr & etc Oxide Coating : ITO, TiO2, SiO2, Nb205 & etc Glass Heating : Max 300℃                           Dry Etching System   E-BEAM Evaporator(Metal,ITO)   PECVD System   Ashing System       The high-density ICP-RIE equipment use d for PSS, MESA, Isolation Etching during the LED Process Holder Type : Square Al Holder Loading Capacity : 2" wafer 32 ea | 4" wafer 7ea Plasma Source : Planar ICP Type RF PowerSupply : Source(3kW)Bias(1kW) Mechanical Chuck with Backside Helium Cooling   The E-BEAM Source, Formation of the Me tal layer and ITO layer used for LED Chip Dome Type : Lift off Type,Planetary Type Loading Capacity : ITO 2" wafer 108ea | Metal 2"wafer 76ea Evaporator Source : E-Beam ( 4 ~ 6 pocket 40cc) ITO Heating Temp. : 300℃ on wafer 1 Batch Run Time : 40min (Mo 3000 Å)   The SiO2 Protective film formed by Chemi cal Reaction after LED Chip Process Loading Capacity : 2" wafer 32ea Plasma Source : PE Plasma Type Source Power : RF 1kw 1 Batch Run Time : 10min (Process Time 30sec)   Equipment for remove of the remaining P hoto Resist during the LED Chip Process Loading Capacity : 2" wafer 32ea Plasma Source : Planar CCP Type Source Power : RF 1kw, 13.56MHz Substrate Temp. : 400℃ Gas scrubber       RTP System             Equipment for improve of the LED Metal L ayer property the rapid heating system Loading Capacity : 2"wafer 12ea Max Temp. : 1000℃ Process Temp. : 300℃ ~ 900℃ Optical pyrometer or Thermo Couple cont rol             6Gen. In-Line Sputtering System   5Gen. In-Line Sputtering System   CIGS Cluster System   ICP-CVD for Graphene       The equipment for manufacture of FPD el ectrode. Touch Panel, TFT electrode, AM OLED electrode, Color filter etx applied Substrate Type : Glass & Wafer Substrate Size : 2Gen ~ 6 Gen Metal Coating : Mo, Al, CIGS,Ag,Cr & etc Oxide Coating : AZO,GZO,ITO,ZnO & etc Glass Heating : Max 300℃   The equipment for manufacture of FPD el ectrode. Touch Panel, TFT electrode, AM OLED electrode, Color filter etx applied Substrate Type : Glass & Wafer Substrate Size : 2Gen ~ 6 Gen Metal Coating : Mo, Al, CIGS,Ag,Cr & etc Oxide Coating : AZO,GZO,ITO,ZnO & etc Glass Heating : Max 300℃   Formation to Organic Evaporator, Metal E vaporation, Encapsulation device Used o n OLED Panel, PMOLED, AMOLED, Light ing applied. Substrate Type: 730mm x 920mm(option) Configuraiton : Loading > Pretreatment > Organic layer > Metal layer > Encapsulation > Unloading Metal Chamber : High Temp. Effusion & T hermal Source, Pin Align System Encapsulation System : Dispenser, UV Cu ring & Pressing System   Equipment for Graphene Substrate Size : Option Substrate Heating : Max. 700℃ Configuration : Graphene Layer ICP-CVD Metal Layer Sputter Load Lock Pre Treatment Chamber           Magnetron Sputtering System   3.5G In-Line Sputtering System   PECVD System   Thermal CVD System       Magnetron Sputter Gun : 2~16 inch Substate Size : ~ 200mm x 200mm Process Gas : Ar,O2,N2 Deposition Direction : Up or Downward Process Temp. : ~ 700℃ Film Thickness Uniformity : ≤±3% Heating Uniformity : ≤±3% LoadLock System Full Automation Control   Substrate Size : 156mm x 156mm Solar Wafer 12pcs Sputtering Source : 1set Target Size : Aprox 100mm x 800mm 8T Process Gas : Ar, O2, N2 Al Film : Thickness 2 μm Uniformity : WIW, WTW, RTR, ±5%   Substrate Size : ~200mm x 200mm Deposition Direction : Upward Plasma Source : RF or VHF PowerSupply Process Gas : any of requested Gas Base d on Ar,O2 Process Temp. : ~ 700℃ Uniformity : ≤±3% Heating Uniformity : ≤±3% LoadLock System Full Automation Control   Substrate Size : ~ 4inch Deposition Direction : Downward Process Gas : any of requested Gas Base Process Temp. : ~ 1000℃ Film Thickness Uniformity : ≤±3% Heating Uniformity : ≤±3% l         Dry Etching System(BEP 5000)   Asher RIE System   E-Beam Evaporator System   RTP System       BEP 5000 High density plasma etching sy stem is batch production equipment that s upports the application of general metal & dielectric material film & III-V compund. M aterial etching process for the field of LED (PSS), Optical, Nano and MEMS Device III-V Compound Etching AI2O3,Si,SIO2,SI3N4 Etching Metal Etching MEMS,Ashing,PSS Process   Substrate Size : ~ 200mm x 200mm Etching Direction : Downward Process Gas : Any of Requested Gas Bas ed on Ar, O2, CF4, SF6 Etching Uniformity : ≤±5% LoadLock system Full Automation control   Substrate Size : ~ 8inch Etching Direction :Upward E-Beam source : ~ 15kw Film Thickness Uniformity : ≤±4% Heating Uniformity : ≤±3% Full Automation control   Substrate Size : ~ 8inch Heating Source : Halogen lamp Process Temp. : ~ 1000℃ Heating Uniformity : ≤±3% Toggle Switch control or Touch Pannel Co ntrol         2Gen.PECVD System                         Substrate Size :~156mmx156mm 4pcs Deposition Direction : Upward Plasma Source : RF or VHF Power Supply Process Gas : Si3N4, SiO2,Al2O3 Process Temp : ~700℃ Uniformity : ≤±3% Heating Uniformity : ≤±3% LoadLock System Full Automation control